A semiconductor has an energy gap of 1 eV. At what temperature will the intrinsic carrier concentration be 10^16 m^(-3)?
Q1. A semiconductor has an energy gap of 1 eV. At what temperature will the intrinsic carrier concentration be 10^16 m^(-3)?
Answer: 500 K
Explanation: Using n_i = √(N_c * N_v) * exp(-E_g / (2kT)), we can find T for given n_i.